| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-220 |
| Drain to Source Resistance (on) (Rds) | 700 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 125 W |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 9.00 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
DESCRIPTION
●Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
●■ TYPICAL RDS(on)= 0.7Ω
●■ EXTREMELY HIGH dv/dt CAPABILITY
●■ 100% AVALANCHE TESTED
●■ VERY LOW INTRINSIC CAPACITANCES
●■ GATE CHARGE MINIMIZED
●APPLICATIONS
●■ HIGH CURRENT, HIGH SPEED SWITCHING
●■ SWITCH MODE POWER SUPPLIES (SMPS)
●■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
ST Microelectronics
9 Pages / 0.1 MByte
ST Microelectronics
Trans MOSFET N-CH 500V 7.2A 3Pin(3+Tab) TO-220FP Tube
ST Microelectronics
N-CHANNEL 700V 1Ω 7.5A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET
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