TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 6 Ω |
Polarity | N-Channel |
Power Dissipation | 140 W |
Threshold Voltage | 4 V |
Input Capacitance | 939 pF |
Drain to Source Voltage (Vds) | 1500 V |
Continuous Drain Current (Ids) | 2.50 A |
Rise Time | 47 ns |
Input Capacitance (Ciss) | 939pF @25V(Vds) |
Input Power (Max) | 140 W |
Fall Time | 61 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 140W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.4 mm |
Size-Width | 4.6 mm |
Size-Height | 15.75 mm |
Operating Temperature | 150℃ (TJ) |
The STP3N150 is a PowerMESH™ N-channel Power MOSFET features minimized intrinsic capacitances and Qg. This Power MOSFET designed using the company"s consolidated strip layout-based MESH OVERLAY™ process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.
● 100% Avalanche tested
● High speed switching
● Creepage distance path is 5.4mm
ST Microelectronics
15 Pages / 0.77 MByte
ST Microelectronics
1 Pages / 0.09 MByte
ST Microelectronics
24 Pages / 1 MByte
ST Microelectronics
3 Pages / 0.04 MByte
ST Microelectronics
1 Pages / 0.12 MByte
ST Microelectronics
STMICROELECTRONICS STP34NM60N Power MOSFET, N Channel, 29A, 600V, 0.092Ω, 10V, 3V
ST Microelectronics
N-CHANNEL 60V - 0.032Ω - 30A TO-220/TO-220FP STRIPFET II POWER MOSFET
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.