| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 40.0 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.028 Ω |
| Polarity | N-Channel |
| Power Dissipation | 150 W |
| Threshold Voltage | 1.7 V |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Breakdown Voltage (Gate to Source) | ±17.0 V |
| Continuous Drain Current (Ids) | 40.0 A |
| Rise Time | 82 ns |
| Input Capacitance (Ciss) | 2300pF @25V(Vds) |
| Input Power (Max) | 150 W |
| Fall Time | 24 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 150W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 9.15 mm |
| Operating Temperature | 175℃ (TJ) |
The STP40NF10L is a 100V N-channel Power MOSFET realized with unique STripFET process. It has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for telecom and computer application. It is also intended for any application with low gate charge drive requirements. Improved gate charge and lower power dissipation to meet today"s challenging efficiency requirements.
● Exceptional dv/dt capability
● 100% Avalanche tested
● Application oriented characterization
ST Microelectronics
12 Pages / 0.22 MByte
ST Microelectronics
20 Pages / 2.6 MByte
ST Microelectronics
4 Pages / 0.01 MByte
ST Microelectronics
Trans MOSFET N-CH 100V 40A 3Pin(3+Tab) TO-220 Tube
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