| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 500 V |
| Current Rating | 24.0 A |
| Case/Package | TO-247-3 |
| Polarity | N-CH |
| Power Dissipation | 335 W |
| Drain to Source Voltage (Vds) | 500 V |
| Continuous Drain Current (Ids) | 24.0 A |
| Rise Time | 19 ns |
| Input Capacitance (Ciss) | 3630pF @25V(Vds) |
| Input Power (Max) | 335 W |
| Fall Time | 14 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 335W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Height | 21.46 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Make an effective common gate amplifier using this APT24F50B power MOSFET from Microsemi. Its maximum power dissipation is 335000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
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MOSFET N-CH 500V 24A TO-247
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