| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-220 |
| Drain to Source Resistance (on) (Rds) | 14.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 30.0 W |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Drain to Source) | 60.0 V |
| Breakdown Voltage (Gate to Source) | ±15.0 V |
| Continuous Drain Current (Ids) | 60.0 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
Description
●This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.
●■ Exceptional dv/dt capability
●■ 100% avalanche tested
●■ Application oriented characterization
●■ 175°C operating range
●■ Low threshold drive
●Applications
●■ Switching application
ST Microelectronics
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Trans MOSFET N-CH 60V 60A 3Pin(3+Tab) TO-220 Tube
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