| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 1.1 Ω |
| Polarity | N-Channel |
| Power Dissipation | 150 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 950 V |
| Continuous Drain Current (Ids) | 7.2A |
| Rise Time | 9 ns |
| Input Capacitance (Ciss) | 1031pF @100V(Vds) |
| Input Power (Max) | 150 W |
| Fall Time | 23 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 150W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 15.75 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STP7N95K3 is a SuperMESH3™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. The new SuperMESH3™ is obtained through the combination of a further fine tuning of ST"s well established strip-based PowerMESH™ layout with a new optimized vertical structure. In addition to pushing ON-resistance significantly down, special attention has been taken to ensure a very good dynamic performances coupled with a very large avalanche capability for the most demanding application.
● Extremely large avalanche performance
● 100% Avalanche tested
ST Microelectronics
15 Pages / 0.91 MByte
ST Microelectronics
1 Pages / 0.09 MByte
ST Microelectronics
4 Pages / 0.01 MByte
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