| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Forward Voltage | 1.7V @20A |
| Forward Current | 40000 mA |
| Forward Current (Max) | 40000 mA |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Junction Temperature (Max) | 175 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The SiC diode is a high voltage power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
●Used as a freewheeling or output rectification diode, this rectifier will enhance the performance and form factor of the targeted power supply or inverter.
●Key Features
● No reverse recovery charge in application current range
● Switching behavior independent of temperature
● Dedicated to PFC applications
● ECOPACK® 2 compliant component
ST Microelectronics
9 Pages / 0.33 MByte
ST Microelectronics
68 Pages / 3.38 MByte
ST Microelectronics
28 Pages / 1.28 MByte
ST Microelectronics
26 Pages / 2.4 MByte
ST Microelectronics
Diode Schottky 650V 40A 3Pin(3+Tab) TO-247 Tube
ST Microelectronics
Diode Schottky SiC 650V 40A Automotive 3Pin(3+Tab) TO-247 Tube
ST Microelectronics
650V power Schottky silicon-carbide diode
ST Microelectronics
Automotive 650V power Schottky silicon carbide diode
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
