TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 4 Pin |
Voltage Rating (DC) | -60.0 V |
Current Rating | -2.30 A |
Case/Package | TO-261-4 |
Number of Positions | 4 Position |
Drain to Source Resistance (on) (Rds) | 0.39 Ω |
Polarity | P-Channel |
Power Dissipation | 2 W |
Drain to Source Voltage (Vds) | 60 V |
Breakdown Voltage (Gate to Source) | ±20.0 V |
Continuous Drain Current (Ids) | 1.70 A |
Rise Time | 2.2 ns |
Input Capacitance (Ciss) | 219pF @30V(Vds) |
Input Power (Max) | 2 W |
Fall Time | 5.7 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 2W (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The ZXMP6A13GTA is a P-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin finish annealed over copper lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
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