| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 3.00 A |
| Case/Package | SOIC-8 |
| Number of Positions | 8 Position |
| Polarity | NPN, PNP |
| Power Dissipation | 1.6 W |
| Breakdown Voltage (Collector to Emitter) | 30 V |
| Continuous Collector Current | 3A |
| hFE Min | 100 @1A, 2V |
| Input Power (Max) | 2 W |
| DC Current Gain (hFE) | 100 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Junction Temperature (Max) | 150 ℃ |
| Power Dissipation (Max) | 2 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Cut Tape (CT) |
| Operating Temperature | 150℃ (TJ) |
Description
●The STS01DTP06 is a Hybrid dual NPN-PNP complementary power bipolar transistor manufactured by using the latest low voltage planar techlogy. The STS01DTP06 is housed in dual island SO-8 package with separated terminals for higher assembly flexibility, specifically recommended to be used in Push-Pull or Totem Pole configuration as post IGBTs and MOSFETs driver.
●General features
●■ High gain
●■ Low VCE(sat)
●■ Simplified circuit design
●■ Reduced component count
●Applications
●■ Push-Pull or Totem-Pole configuration
●■ MOSFET and IGBT gate driving
●■ Motor, relay and solenoid driving
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