| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 3.00 A |
| Case/Package | SOIC-8 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.09 Ω |
| Polarity | Dual N-Channel |
| Power Dissipation | 1.6 W |
| Threshold Voltage | 1.7 V |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Breakdown Voltage (Gate to Source) | ±18.0 V |
| Continuous Drain Current (Ids) | 3.00 A |
| Rise Time | 20 ns |
| Input Capacitance (Ciss) | 121pF @25V(Vds) |
| Input Power (Max) | 2 W |
| Fall Time | 8 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tape & Reel (TR) |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.65 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The STS2DNF30L is a dual N-channel STripFET™ Power MOSFET for switching applications. This Power MOSFET is the latest development of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
● Standard outline for easy automated surface-mount assembly
● Low threshold gate drive
ST Microelectronics
12 Pages / 0.28 MByte
ST Microelectronics
12 Pages / 0.34 MByte
ST Microelectronics
8 Pages / 0.21 MByte
ST Microelectronics
N-Channel 30V - 0.09Ω - 3A - SO-8 STripFET(TM) II POWER MOSFET
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