STS9P3LLH6 Datasheet PDF - ST Microelectronics

Manufacturer:	ST Microelectronics
Category:	MOSFETs
Case Package:	SOIC-8
Description:	P-channel -30V, 12mOhm typ., -9A, STripFET H6 Power MOSFET in a SO-8 package
Documentation:	STS9P3LLH6 User Reference Manual Guide (60 Pages)STS9P3LLH6 Application Note (14 Pages)
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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STS9P3LLH6 Specifications

TYPE	DESCRIPTION
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Number of Channels	1 Channel
Drain to Source Resistance (on) (Rds)	12 mΩ
Power Dissipation	2.7 W
Threshold Voltage	1 V
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30 V
Rise Time	93 ns
Input Capacitance (Ciss)	2615pF @25V(Vds)
Fall Time	18 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	55 ℃
Power Dissipation (Max)	2.7W (Ta)