| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 2 Pin |
| Voltage Rating (DC) | 1.20 kV |
| Current Rating | 60.0 A |
| Case/Package | DO-247-2 |
| Output Current | ≤60.0 A |
| Number of Positions | 2 Position |
| Forward Voltage | 2.25 V |
| Polarity | Standard |
| Reverse recovery time | 125 ns |
| Forward Current | 60 A |
| Max Forward Surge Current (Ifsm) | 400 A |
| Maximum Forward Voltage (Max) | 840 mV |
| Forward Current (Max) | 60 A |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Junction Temperature | 175℃ (Max) |
| Junction Temperature (Max) | 175 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.75 mm |
| Size-Width | 5.15 mm |
| Size-Height | 20.15 mm |
| Operating Temperature | -65℃ ~ 175℃ |
The STTH6012W is an Ultrafast Recovery Diode with high reverse voltage capability. The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy-duty applications that demand long term reliability. The improved performance in low leakage current and therefore thermal runaway guard band, is an immediate competitive advantage for this device.
● Very low conduction and switching losses
● High frequency and high pulsed current operation
● High junction temperature
● 80A RMS forward current
● 0.6°C/W Junction to case thermal resistance
ST Microelectronics
8 Pages / 0.1 MByte
ST Microelectronics
20 Pages / 2.6 MByte
ST Microelectronics
5 Pages / 0.04 MByte
ST Microelectronics
1 Pages / 0.12 MByte
ST Microelectronics
Ultrafast recovery - 1200V diode
ST Microelectronics
STMICROELECTRONICS STTH6012W Standard Power Diode, 1.2kV, 60A, Single, 840mV, 50ns, 400A
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
