| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 13.0 A |
| Case/Package | TO-247-3 |
| Drain to Source Resistance (on) (Rds) | 480 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 190W (Tc) |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 13.0 A |
| Rise Time | 13 ns |
| Input Capacitance (Ciss) | 2600pF @25V(Vds) |
| Fall Time | 15 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 190W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Operating Temperature | 150℃ (TJ) |
N-Channel 600V 13A (Tc) 190W (Tc) Through Hole TO-247-3
ST Microelectronics
9 Pages / 0.32 MByte
ST Microelectronics
9 Pages / 0.32 MByte
ST Microelectronics
Power MOSFET, N Channel, 13A, 1kV, 700mohm, 10V, 3.75V
ST Microelectronics
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