| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 500 V |
| Current Rating | 20.0 A |
| Case/Package | TO-247-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.25 Ω |
| Polarity | N-Channel |
| Power Dissipation | 214 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 500 V |
| Breakdown Voltage (Drain to Source) | 500 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 20.0 A |
| Rise Time | 20 ns |
| Input Capacitance (Ciss) | 1380pF @25V(Vds) |
| Input Power (Max) | 214 W |
| Fall Time | 15 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 65 ℃ |
| Power Dissipation (Max) | 214W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.75 mm |
| Size-Width | 5.15 mm |
| Size-Height | 20.15 mm |
| Operating Temperature | 150℃ (TJ) |
The STW20NM50FD is a 500V N-channel FDmesh™ Power MOSFET with fast diode. The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase shift converters. The MOSFET is ideal for ZVS phase-shift full bridge converters for SMPS and welding equipment.
● Typical RDS (on)
● High dv/dt and avalanche capabilities
● 100% Avalanche tested
● Low input capacitance and gate charge
● Low gate input resistance
● Tight process control and high manufacturing yields
ST Microelectronics
8 Pages / 0.24 MByte
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20 Pages / 2.6 MByte
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32 Pages / 0.51 MByte
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1 Pages / 0.12 MByte
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