| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.13 Ω |
| Polarity | N-Channel |
| Power Dissipation | 160 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 2400 pF |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 21A |
| Rise Time | 30 ns |
| Input Capacitance (Ciss) | 2400pF @50V(Vds) |
| Input Power (Max) | 160 W |
| Fall Time | 40 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 160W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.75 mm |
| Size-Width | 5.15 mm |
| Size-Height | 20.15 mm |
| Operating Temperature | 150℃ (TJ) |
The STW25NM60ND is a FDmesh™ II N-channel Power MOSFET features low input capacitance and gate charge. This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low ON-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.
● The worldwide best RDS (ON) area amongst the fast recovery diode device
● 100% Avalanche tested
● Extremely high dV/dt and avalanche capabilities
ST Microelectronics
21 Pages / 0.63 MByte
ST Microelectronics
22 Pages / 0.61 MByte
ST Microelectronics
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ST Microelectronics
Trans MOSFET N-CH 600V 21A 3Pin(3+Tab) TO-247 Tube
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