| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC |
| Number of Positions | 8 Position |
| Polarity | NPN, PNP |
| Power Dissipation | 2.3 W |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| Continuous Collector Current | 6.7A/5.9A |
| DC Current Gain (hFE) | 300 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.3 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Cut Tape (CT) |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.75 mm |
The PBSS4041SPN is a 60V NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) Transistor with very low collector-emitter saturation voltage and high efficiency due to less heat generation. Suitable for load switch, battery driven devices and charging circuits.
● 150°C Junction temperature
● Smaller required printed-circuit board (PCB) area than for conventional transistors
● High collector current capability
● High collector current gain
Nexperia
TRANS NPN/PNP 60V 6.7A/5.9A 8SO
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TRANS PNP 60V 5.7A SOT223
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