| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 6 Ω |
| Polarity | N-Channel |
| Power Dissipation | 140 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 1500 V |
| Breakdown Voltage (Drain to Source) | 1500 V |
| Continuous Drain Current (Ids) | 1.30 A |
| Rise Time | 47 ns |
| Input Capacitance (Ciss) | 939pF @25V(Vds) |
| Input Power (Max) | 140 W |
| Fall Time | 61 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 50 ℃ |
| Power Dissipation (Max) | 140W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.75 mm |
| Size-Width | 5.15 mm |
| Size-Height | 20.15 mm |
| Operating Temperature | 150℃ (TJ) |
The STW3N150 is a PowerMESH™ N-channel Power MOSFET features minimized intrinsic capacitances and Qg. This Power MOSFET designed using the company"s consolidated strip layout-based MESH OVERLAY™ process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.
● 100% Avalanche tested
● High speed switching
● Creepage distance path is 5.4mm
ST Microelectronics
15 Pages / 0.77 MByte
ST Microelectronics
24 Pages / 1 MByte
ST Microelectronics
23 Pages / 1.03 MByte
ST Microelectronics
5 Pages / 0.04 MByte
ST Microelectronics
1 Pages / 0.12 MByte
ST Microelectronics
N-channel 1500V, 6Ω, 2.5A, PowerMESH™ Power MOSFET in TO-220, TO-247, TO-3pF
ST Microelectronics
Trans MOSFET N-CH 650V 28A 3Pin(3+Tab) TO-247 Tube
ST Microelectronics
Trans MOSFET N-CH 500V 22A 3Pin(3+Tab) TO-247 Tube
ST Microelectronics
STMICROELECTRONICS STW35N60DM2 Power MOSFET, Mdmesh DM2, N Channel, 28A, 600V, 0.094Ω, 10V, 4V
ST Microelectronics
Trans MOSFET N-CH 550V 33A 3Pin(3+Tab) TO-247 Tube
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
