Product Details
●The HMC606LC5 is a gallium arsenide (GaAs), indium gallium phosphide (InGaP), heterojunction bipolar transistor (HBT), monolithic microwave integrated circuit (MMIC) distributed amplifier housed in a 32-terminal, ceramic, leadless chip carrier (LCC) package that operates from 2 GHz to 18 GHz. With an input signal of 12 GHz, the amplifier provides ultralow phase noise performance of −160 dBc/Hz at a 10 kHz offset, representing a significant improvement over field effect transistor (FET)-based distributed amplifiers.
●The HMC606LC5 provides 13.5 dB of small signal gain, 27 dBm output IP3, and 15 dBm of output power for 1 dB compression while requiring 64 mA from a 5.0 V supply. The input and output of the HMC606LC5 amplifier are internally matched to 50 Ω and are internally dc blocked.
●Applications
● Radars, electronic warfare (EW), and electronic counter measures (ECMs)
● Microwave radios
● Test instrumentation
● Military and space
● Fiber optic systems
●### Features and Benefits
● Ultralow phase noise: −160 dBc/Hz typical at 10 kHz
● Output power for 1 dB compression (P1dB): 15 dBm typical at 2 GHz to 12 GHz frequency range
● Gain: 13.5 dB typical at 2 GHz to 12 GHz frequency range
● Output third-order intercept (IP3): 27 dBm typical at 2 GHz to 12 GHz frequency range
● Supply voltage: 5.0 V at 64 mA typical
● 50 Ω matched input/output
● 32-terminal, ceramic, leadless chip carrier (LCC)
