| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Channels | 1 Channel |
| Polarity | N-CH |
| Power Dissipation | 255 W |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 35A |
| Rise Time | 40 ns |
| Input Capacitance (Ciss) | 4200pF @50V(Vds) |
| Input Power (Max) | 225 W |
| Fall Time | 50 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 255W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | 150℃ (TJ) |
Description
●This device is an N-channel Power MOSFET realized using the second generation of MDmesh™ technology known as FDmesh™ II. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout and associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
●■ The worldwide best RDS(on)
●area amongst the fast recovery diode devices
●■ 100% avalanche tested
●■ Low input capacitance and gate charge
●■ Low gate input resistance
●■ Extremely high dv/dt and avalanche capabilities.
●Application
●■ Switching applications
●– Automotive
ST Microelectronics
13 Pages / 1.2 MByte
ST Microelectronics
14 Pages / 1.19 MByte
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13 Pages / 1.22 MByte
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