| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Rating | 450 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.03 Ω |
| Polarity | N-Channel |
| Power Dissipation | 450 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 68A |
| Rise Time | 17 ns |
| Input Capacitance (Ciss) | 5200pF @100V(Vds) |
| Input Power (Max) | 450 W |
| Fall Time | 9 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 450W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.75 mm |
| Size-Width | 20.15 mm |
| Size-Height | 5.15 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Thanks to STMicroelectronics, both your amplification and switching needs can be taken care of with one component: the STW70N60M2 power MOSFET. Its maximum power dissipation is 450000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device utilizes mdmesh technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
ST Microelectronics
17 Pages / 0.18 MByte
ST Microelectronics
13 Pages / 0.99 MByte
ST Microelectronics
30 Pages / 0.31 MByte
ST Microelectronics
Power MOSFET, N Channel, 66A, 600V, 0.037Ω, 10V, 4V
ST Microelectronics
MOS Power Transistors HV (>= 200V)
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
