| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 100 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -60.0 V |
| Current Rating | -3.00 A |
| Case/Package | TO-226-3 |
| Polarity | PNP |
| Power Dissipation | 900 mW |
| Gain Bandwidth Product | 100 MHz |
| Breakdown Voltage (Collector to Emitter) | 30 V |
| Continuous Collector Current | 3A |
| hFE Min | 100 @500mA, 2V |
| Input Power (Max) | 900 mW |
| DC Current Gain (hFE) | 200 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 65 ℃ |
| Power Dissipation (Max) | 900 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 4.8 mm |
| Size-Width | 3.8 mm |
| Size-Height | 4.5 mm |
| Operating Temperature | 150℃ (TJ) |
Do you require a transistor in your circuit operating in the high-voltage range? This PNP STX790A-AP general purpose bipolar junction transistor, developed by STMicroelectronics, is your solution. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 900 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 5 V.
ST Microelectronics
10 Pages / 0.17 MByte
ST Microelectronics
1 Pages / 0.13 MByte
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