TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 300 V |
Current Rating | 60.0 A |
Case/Package | TO-247-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.033 Ω |
Polarity | N-Channel |
Power Dissipation | 450 W |
Threshold Voltage | 3.75 V |
Drain to Source Voltage (Vds) | 300 V |
Breakdown Voltage (Drain to Source) | 300 V |
Breakdown Voltage (Gate to Source) | ±30.0 V |
Continuous Drain Current (Ids) | 60.0 A |
Rise Time | 90 ns |
Input Capacitance (Ciss) | 7200pF @25V(Vds) |
Input Power (Max) | 450 W |
Fall Time | 60 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 450W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 15.9 mm |
Size-Width | 5.3 mm |
Size-Height | 20.3 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Compared to traditional transistors, STY60NK30Z power MOSFETs, developed by STMicroelectronics, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 450000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
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