TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220 |
Drain to Source Resistance (on) (Rds) | 0.012 Ω |
Polarity | N-Channel |
Power Dissipation | 250 W |
Threshold Voltage | 3 V |
Drain to Source Voltage (Vds) | 100 V |
Breakdown Voltage (Drain to Source) | 100 V |
Breakdown Voltage (Gate to Source) | ±20.0 V |
Continuous Drain Current (Ids) | 85.0 A |
Rise Time | 90 ns |
Input Capacitance (Ciss) | 6550pF @25V(Vds) |
Fall Time | 130 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 250000 mW |
TYPE | DESCRIPTION |
---|
Packaging | Tube |
Size-Height | 9.01 mm |
Operating Temperature | -55℃ ~ 175℃ |
The SUP85N10-10-E3 is a 100VDS TrenchFET® N-channel enhancement-mode Power MOSFET with antiparallel diode.
● 100% Rg tested
● 100% UIS tested
● -55 to 150°C Operating temperature range
Vishay Semiconductor
8 Pages / 0.36 MByte
Vishay Semiconductor
8 Pages / 0.11 MByte
Vishay Semiconductor
2 Pages / 0.22 MByte
Vishay Semiconductor
Trans MOSFET N-CH 100V 85A 3Pin(3+Tab) TO-220AB
Vishay Intertechnology
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
VISHAY
TO-220-3 N-CH 100V 85A 10.5mΩ
Vishay Semiconductor
Trans MOSFET N-CH 100V 85A 3Pin(3+Tab) TO-220AB
VISHAY
TO-220-3 N-CH 100V 85A 10.5mΩ
Vishay Siliconix
Trans MOSFET N-CH 100V 85A 3Pin(3+Tab) TO-220AB
Vishay Semiconductor
MOSFET 100V 85A 250W 10.5mohm @ 10V
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.