TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | SOT-883-3 |
Power Dissipation | 100 mW |
Drain to Source Voltage (Vds) | 30 V |
Breakdown Voltage (Drain to Source) | 30 V |
Breakdown Voltage (Gate to Source) | 30 V |
Reverse Breakdown Voltage | 30 V |
Input Capacitance (Ciss) | 4pF @10V(Vds) |
Input Power (Max) | 100 mW |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 100 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 1.08 mm |
Size-Width | 0.68 mm |
Size-Height | 0.41 mm |
Operating Temperature | 150℃ (TJ) |
TF412S is a JunctionFET 30 V 10 mA Nch SOT-883(1.0mm×0.6mm×0.4mm) for Low-Frequency General-Purpose Amplifier and Impedance Converter Applications.
●Features | | Benefits
●---|---|---
● | | | | |
● Low IGSS 1.0nA MAX
●| |
● High sensitive sensor module by low-leakage JFET
● Low IDSS 1.2-3.0mA
●| |
● Reduce power consumption by low drain current JFET
● Ultrasmall package facilitates miniaturization in end products
●| |
● Downsizing of sensor module by tiny package
● Halogen free compliance
●| |
● Environmental consideration
ON Semiconductor
4 Pages / 0.29 MByte
ON Semiconductor
2 Pages / 0.13 MByte
ON Semiconductor
2 Pages / 0.05 MByte
ON Semiconductor
2 Pages / 0.13 MByte
ON Semiconductor
JFET N-CH 30V 0.1W(1/10W) SOT-883 XDFN3
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.