| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | PG-TSDSON |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.009 Ω |
| Polarity | N-Channel |
| Power Dissipation | 50 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | 20A |
| Rise Time | 77 ns |
| Input Capacitance (Ciss) | 2000pF @30V(Vds) |
| Fall Time | 6 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2100 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3.4 mm |
| Size-Width | 3.4 mm |
| Size-Height | 1 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The BSZ110N06NS3 G is a 60V N-channel Power MOSFET optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers, desktops and tablet charger. Dramatically reduced gate charge and output charge enable high system efficiency and power density. The OptiMOS™ power MOSFET is ideally suited for high frequency switching and DC-DC converters.
● Highest system efficiency
● Less paralleling required
● Increased power density
● Very low voltage overshoot
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