| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 2.00 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 2 W |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| hFE Min | 1000 @1A, 4V |
| Input Power (Max) | 2 W |
| DC Current Gain (hFE) | 1000 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 2000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 9.15 mm |
| Operating Temperature | 150℃ (TJ) |
The TIP112 is a NPN complementary silicon epitaxial-base Power Transistor with monolithic Darlington configuration mounted in a JEDEC plastic package. It is intended for use in medium power linear and switching applications.
● Integrated anti-parallel collector-emitter diode
● PNP complementary type is TIP117
ST Microelectronics
6 Pages / 0.23 MByte
ST Microelectronics
20 Pages / 2.6 MByte
ST Microelectronics
30 Pages / 0.31 MByte
ST Microelectronics
1 Pages / 0.16 MByte
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