TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 60.0 V |
Current Rating | 1.00 A |
Case/Package | TO-220-3 |
Number of Positions | 3 Position |
Polarity | NPN |
Power Dissipation | 2 W |
Breakdown Voltage (Collector to Emitter) | 60 V |
hFE Min | 15 @1A, 4V |
hFE Max | 75 |
Input Power (Max) | 2 W |
DC Current Gain (hFE) | 75 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | 65 ℃ |
Power Dissipation (Max) | 2000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Material | Silicon |
Size-Length | 10.4 mm |
Size-Width | 4.6 mm |
Size-Height | 15.75 mm |
Operating Temperature | 150℃ (TJ) |
The TIP29A is a NPN Power Transistor manufactured in Planar technology with "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.
● PNP types is TIP30A
ST Microelectronics
9 Pages / 0.22 MByte
ST Microelectronics
5 Pages / 0.09 MByte
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1 Pages / 0.06 MByte
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25 Pages / 0.25 MByte
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