TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 3 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -100 V |
Current Rating | -1.00 A |
Case/Package | TO-220-3 |
Number of Positions | 3 Position |
Polarity | PNP |
Power Dissipation | 30 W |
Breakdown Voltage (Collector to Emitter) | 100 V |
hFE Min | 15 @1A, 4V |
hFE Max | 75 |
Input Power (Max) | 2 W |
DC Current Gain (hFE) | 15 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 2000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Bulk |
Material | Silicon |
Size-Length | 10.67 mm |
Size-Width | 4.83 mm |
Size-Height | 9.4 mm |
Operating Temperature | 150℃ (TJ) |
The TIP30C is a PNP Epitaxial Silicon Transistor offers -100V collector-base voltage and -1A collector current. It is designed for use in medium power linear switching applications.
● Complementary to TIP29 series
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