TK11A65W,S5X Datasheet PDF - Toshiba

Manufacturer:	Toshiba
Category:	MOSFETs
Case Package:	TO-220-3
Description:	Trans MOSFET N-CH 650V 11.1A 3Pin TO-220SIS
Documentation:	TK11A65W,S5X Datasheet (10 Pages)Package Outline Dimension on9 Page
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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TK11A65W,S5X Specifications

TYPE	DESCRIPTION
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Channels	1 Channel
Drain to Source Resistance (on) (Rds)	330 mΩ
Power Dissipation	35 W
Threshold Voltage	2.5V ~ 3.5V
Drain to Source Voltage (Vds)	650 V
Breakdown Voltage (Drain to Source)	650 V
Rise Time	23 ns
Input Capacitance (Ciss)	890pF @300V(Vds)
Fall Time	5.5 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	55 ℃
Power Dissipation (Max)	35W (Tc)