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TK31E60W,S1VX
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TK31E60W,S1VX Datasheet PDF - Toshiba

Manufacturer:Toshiba
Category:MOSFETs
Case Package:TO-220-3
Description:Mosfet n Ch 600V 30.8A To-220
Documentation:TK31E60W,S1VX Datasheet (10 Pages)Package Outline Dimension on9 Page
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TK31E60W,S1VX Datasheet PDF (10 Pages)
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TK31E60W,S1VX Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-220-3
Power Dissipation230 W
Drain to Source Voltage (Vds)600 V
Rise Time32 ns
Input Capacitance (Ciss)3000pF @300V(Vds)
Fall Time8.5 ns
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)230W (Tc)
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TK31E60W,S1VX Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
MaterialSilicon
Operating Temperature150℃ (TJ)
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TK31E60W,S1VX Documents

TK31E60W,S1VX Datasheet
Toshiba
10 Pages / 0.25 MByte

TK31E60WS1 Documents

TK31E60W,S1VX(S Datasheet PDF
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Trans MOSFET N-CH 600V 30.8A 3Pin TO-220
TK31E60W,S1VX Datasheet PDF
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Mosfet n Ch 600V 30.8A To-220
TK31E60W,S1VX(S"" Datasheet PDF
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Trans MOSFET N-CH 600V 30.8A 3Pin(3+Tab) TO-220
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