| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 1.7 Ω |
| Polarity | N-Channel |
| Power Dissipation | 35 W |
| Threshold Voltage | 2.4 V |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 3.5A |
| Operating Temperature (Max) | 150 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The TK4P60DA is a N-channel enhancement-mode Silicon MOSFET suitable for switching regulator applications.
● Low drain-source ON resistance
● High forward transfer admittance
● Low leakage current
● Enhancement-mode
●Using continuously under heavy loads may cause this product to decrease in the reliability significantly even if the operating conditions are within the absolute maximum ratings.
Toshiba
9 Pages / 0.23 MByte
Toshiba
9 Pages / 0.23 MByte
Toshiba
MOSFET N-Ch MOS 3.5A 600V 80W 490pF 2.2
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