| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOP-8 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.0026 Ω |
| Polarity | P-Channel |
| Power Dissipation | 1.9 W |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 18A |
| Rise Time | 10 ns |
| Input Capacitance (Ciss) | 7420pF @10V(Vds) |
| Fall Time | 275 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1900 mW |
| TYPE | DESCRIPTION |
|---|
| Packaging | Cut Tape (CT) |
| Material | Silicon |
The TPC8120 is a -30V Silicon P-channel MOSFET with low drain-source ON resistance. Suitable for use in lithium ion battery and power management switch applications.
● High forward transfer admittance
● Low leakage current
● Enhancement mode
● Small footprint due to small and thin package
Toshiba
22 Pages / 0.35 MByte
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