| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | SOT-23-8 |
| Polarity | P-CH |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 6A |
| Input Capacitance (Ciss) | 1760pF @10V(Vds) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | 150℃ (TJ) |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) Notebook PC Applications Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 21 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.6 S (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) • Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1mA)
Toshiba
7 Pages / 0.25 MByte
Toshiba
7 Pages / 0.22 MByte
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