TPCP8402 Datasheet PDF - Toshiba

TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) Portable Equipment Applications Mortor Drive Applications DC-DC Converter Applications • Low drain-source ON resistance : P Channel RDS (ON) = 60 mΩ (typ.) N Channel RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance : P Channel |Yfs| = 6.0 S (typ.) N Channel |Yfs| = 7.0 S (typ.) • Low leakage current : P Channel IDSS = −10 μA (VDS = −30 V) N Channel IDSS = 10 μA (VDS = 30 V) • Enhancement−mode : P Channel Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1mA) N Channel Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA)