| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-92-3 |
| Power Rating | 1 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 1.8 Ω |
| Polarity | N-CH |
| Power Dissipation | 1 W |
| Threshold Voltage | 1.6 V |
| Drain to Source Voltage (Vds) | 40 V |
| Breakdown Voltage (Drain to Source) | 40 V |
| Continuous Drain Current (Ids) | 0.45A |
| Rise Time | 7 ns |
| Input Capacitance (Ciss) | 70 pF |
| Fall Time | 5 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 1W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Bag |
| Material | Silicon |
| Size-Length | 5.21 mm |
| Size-Width | 4.19 mm |
| Size-Height | 5.33 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Microchip Technology"s TN0104N3-G power MOSFET can provide a solution. Its maximum power dissipation is 1000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
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