| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 2 Pin |
| Case/Package | T-1 |
| Number of Positions | 2 Position |
| Forward Voltage | 2.3 V |
| Wavelength | 890 nm |
| Viewing Angle | 44° |
| Peak Wavelength | 890 nm |
| Power Dissipation | 160 W |
| Rise Time | 30 ns |
| Test Current | 100 mA |
| Forward Current | 100 mA |
| Maximum Forward Voltage (Max) | 1.4 V |
| Forward Current (Max) | 100 mA |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 160 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Size-Height | 8.7 mm |
| Operating Temperature | -40℃ ~ 85℃ |
The TSHF5410 is a 890nm Infrared Emitting Diode in GaAlAs double hetero (DH) technology. It is moulded in a clear, untinted plastic package. It is suitable for use in infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements, transmission systems according to IrDA requirements and for carrier frequency based systems (e.g. ASK/FSK -coded, 450KHz or 1.3MHz).
● High speed
● High reliability
● High radiant power
● High radiant intensity
● ϕ = ±22° Angle of half intensity
● Low forward voltage
● Suitable for high pulse current operation
● Good spectral matching with Si photodetectors
● 12MHz High modulation bandwidth (fc)
VISHAY
5 Pages / 0.09 MByte
VISHAY
5 Pages / 0.1 MByte
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