| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 2 Pin |
| Voltage Rating (DC) | 1.30 V |
| Operating Voltage | 1.3V ~ 1.7V |
| Case/Package | T-1 |
| Rise/Fall Time | 0.8 µs |
| Number of Positions | 2 Position |
| Forward Voltage | 2.2 V |
| Viewing Angle | 16° |
| Peak Wavelength | 950 nm |
| Power Dissipation | 170 W |
| Rise Time | 800 ns |
| Test Current | 100 mA |
| Forward Current | 100 mA |
| Maximum Forward Voltage (Max) | 1.3 V |
| Forward Current (Max) | 100 mA |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 170 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Color | Infrared |
| Size-Height | 4.5 mm |
The TSUS4300 from Vishay is a radial leaded GaAs infrared emitting diode. This devices is suitable for high pulse current operation and has good spectral matching with Si photodetectors, TSUS4300 used for infrared remote control and free air transmission systems with low forward voltage and small package requirements, emitter in transmissive sensors and emitter in reflective sensors. It is suitable for use in infrared remote control and free air transmission systems with low forward voltage and small package requirements, emitter in transmissive sensors and emitter in reflective sensors.
● Standard diode case style of T-1 (3mm)
● Angle of half intensity is ±16°
● High reliability
● Peak wavelength of 950nm
● Forward current If of 100mA
● Forward voltage of 1.3V at IF= 100mA
● Power dissipation of 170mW
● Rise time of 800ns
● Fall time of 800ns
● Operating temperature range of -40°C to 85°C
VISHAY
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VISHAY
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