| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 16 Pin |
| Case/Package | DIP-16 |
| Polarity | NPN |
| Power Dissipation | 1.47 W |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 0.5A |
| hFE Min | 1000 |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 1470 mW |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
If you require a higher current gain value in your circuit, then the NPN ULN2003APG(C,N,HZA Darlington transistor, developed by Toshiba, is for you. This product"s maximum continuous DC collector current is 0.5 A, while its minimum DC current gain is 1000@350mA@2 V. It has a maximum collector emitter saturation voltage of 1.1@100mA|1.3@200mA|1.6@350mA V. Its maximum power dissipation is 1470 mW. It has a maximum collector emitter voltage of 50 V. This Darlington transistor array has an operating temperature range of -40 °C to 85 °C.
Toshiba
13 Pages / 0.35 MByte
Toshiba
14 Pages / 0.35 MByte
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