| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 100 mA |
| Case/Package | SC-70-6 |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 8 Ω |
| Polarity | Dual N-Channel |
| Power Dissipation | 150 mW |
| Threshold Voltage | 1.5 V |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Continuous Drain Current (Ids) | 100 mA |
| Rise Time | 35 ns |
| Input Capacitance (Ciss) | 13pF @5V(Vds) |
| Input Power (Max) | 150 mW |
| Fall Time | 80 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 150 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 2 mm |
| Size-Width | 1.25 mm |
| Size-Height | 0.9 mm |
| Operating Temperature | 150℃ (TJ) |
2.5V Drive Nch+Nch MOS FET
●Features
●1) Two 2SK3018 transistors in a single UMT package.
●2) The MOS FET elements are independent, eliminating mutual interference.
●3) Mounting cost and area can be cut in half.
●4) Low On-resistance.
●5) Low voltage drive (2.5V drive) makes this device ideal for portable equipment.
●Structure
●Silicon N-channel MOS FET
●Applications
●Interfacing, switching (30V, 100mA)
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2.5V Drive Nch+Nch MOS FET
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