| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 180 MHz |
| Number of Pins | 6 Pin |
| Voltage Rating (DC) | 50.0 V |
| Current Rating | 150 mA |
| Case/Package | SC-70-6 |
| Power Rating | 0.15 W |
| Number of Positions | 6 Position |
| Polarity | NPN |
| Power Dissipation | 150 mW |
| Gain Bandwidth Product | 180 MHz |
| Breakdown Voltage (Collector to Base) | 60.0 V |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 0.15A |
| hFE Min | 120 @1mA, 6V |
| hFE Max | 560 |
| Input Power (Max) | 150 mW |
| DC Current Gain (hFE) | 120 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 150 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 2 mm |
| Size-Width | 1.25 mm |
| Size-Height | 0.9 mm |
| Operating Temperature | 150℃ (TJ) |
The UMX1NTN is a dual NPN general purpose amplification Bipolar Transistor with epitaxial planar type NPN silicon structure. The device integrating two transistors is available in ultra-compact package, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators and driver ICs.
● Ultra-compact complex digital transistor
● Potential divider type
● Small surface-mount package
● Transistor elements are independent, eliminating interference
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