| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 70.0 V |
| Current Rating | 10.0 A |
| Case/Package | ISOWATT-220-3 |
| Number of Outputs | 1 Output |
| Output Current | 7 A |
| Supply Current | 0.25 mA |
| Drain to Source Resistance (on) (Rds) | 100 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 31 W |
| Breakdown Voltage (Drain to Source) | 70.0 V |
| Continuous Drain Current (Ids) | 10.0 A |
| Output Current (Max) | 7 A |
| Output Current (Min) | 7 A |
| Power Dissipation (Max) | 31000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tube |
| Size-Height | 16.4 mm |
DESCRIPTION
●The VNB10N07, VNK10N07FM, VNP10N07FI and VNV10N07 are monolithic devices made using STMicroelectronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments. Fault feedback can be detected by monitoring the voltage at the input pin.
●■ LINEAR CURRENT LIMITATION
●■ THERMAL SHUT DOWN
●■ SHORT CIRCUIT PROTECTION
●■ INTEGRATED CLAMP
●■ LOW CURRENT DRAWN FROM INPUT PIN
●■ DIAGNOSTIC FEEDBACK THROUGH INPUT PIN
●■ ESD PROTECTION
●■ DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING)
●■ COMPATIBLE WITH STANDARD POWER MOSFET
ST Microelectronics
14 Pages / 0.38 MByte
ST Microelectronics
MOSFET N-CH 70V 10A TO-220
ST Microelectronics
STMICROELECTRONICS VNP10N07-E MOSFET Transistor, N Channel, 5A, 70V, 100mohm, 10V, 3V
ST Microelectronics
MOSFET N-CH 70V 10A ISOWATT-220
ST Microelectronics
MOSFET POWER 70V 10A ISOWATT220
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