| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Outputs | 1 Output |
| Output Current | 60 A |
| Supply Current | 0.1 mA |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.013 Ω |
| Polarity | N-Channel |
| Power Dissipation | 125 W |
| Threshold Voltage | 2.5 V |
| Drain to Source Voltage (Vds) | 55 V |
| Breakdown Voltage (Drain to Source) | 40.0 V |
| Continuous Drain Current (Ids) | 15.0 A |
| Output Current (Max) | 30 A |
| Number of Inputs | 1 Input |
| Operating Temperature (Max) | 150 ℃ |
| Power Dissipation (Max) | 125000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -40℃ ~ 150℃ (TJ) |
The VNP35NV04-E is an OMNIFET fully auto-protected Power MOSFET designed in STMicroelectronics VIPower® M0-3 technology. It is intended for replacement of standard power MOSFETs from DC up to 25kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.
● Diagnostic feedback through input pin
● ESD protection
● Direct access to the gate of the power MOSFET (analogue driving)
● Compatible with standard power MOSFET
ST Microelectronics
19 Pages / 0.29 MByte
ST Microelectronics
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ST Microelectronics
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ST Microelectronics
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