| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 14 Pin |
| Case/Package | DIP-14 |
| Drain to Source Resistance (on) (Rds) | 1.00 Ω |
| Polarity | N-Channel |
| Power Dissipation | 2 W |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 3.00 A |
| Input Capacitance (Ciss) | 110pF @15V(Vds) |
| Input Power (Max) | 2 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Mosfet Array 4 N-Channel 30V 830mA 2W Through Hole 14-DIP
Vishay Siliconix
5 Pages / 0.04 MByte
Vishay Siliconix
4 Pages / 0.09 MByte
Vishay Semiconductor
Trans MOSFET N-CH 30V 0.83A 14Pin SBCDIP
Vishay Siliconix
Trans MOSFET N-CH 30V 0.83A 14Pin SBCDIP
Vishay Siliconix
MOSFET 4N-CH 30V 0.83A 14DIP
Vishay Siliconix
MOSFET 4N-CH 30V 0.83A 14DIP
VISHAY
CDIP-14 4*N-CH 30V 830mA 1Ω
Vishay Intertechnology
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
VISHAY
CDIP-14 4*N-CH 30V 830mA 1Ω
VISHAY
PDIP-14 4*N-CH 30V 830mA 1Ω
Vishay Intertechnology
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
