| TYPE | DESCRIPTION |
|---|
| Mounting Style | Screw |
| Frequency | 80 MHz |
| Number of Pins | 4 Pin |
| Case/Package | T-2 |
| Power Dissipation | 1350000 mW |
| Output Power | 600 W |
| Gain | 21 dB |
| Test Current | 800 mA |
| Input Capacitance (Ciss) | 1580pF @50V(Vds) |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 1350000 mW |
| Voltage Rating | 170 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Box |
| Material | Silicon |
If you need a MOSFET for radio frequency environments, Microsemi offers this VRF157FL RF amplifier that amplifies and switches between electronic signals. Its maximum power dissipation is 1350000 mW. Its maximum frequency is 80 MHz. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 200 °C. This N channel RF power MOSFET operates in enhancement mode.
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