TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 2 Pin |
Case/Package | SMD-2 |
Power Rating | 0.104 W |
Forward Voltage | 1.3 V |
Wavelength | 940 nm |
Viewing Angle | 150° |
Peak Wavelength | 940 nm |
Power Dissipation | 104 mW |
Rise Time | 15 ns |
Test Current | 65 mA |
Forward Current | 65 mA |
Maximum Forward Voltage (Max) | 1.5 V |
Forward Current (Max) | 65 mA |
Operating Temperature (Max) | 85 ℃ |
Operating Temperature (Min) | -40 ℃ |
Power Dissipation (Max) | 104 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Operating Temperature | -40℃ ~ 85℃ (TA) |
The VSMB10940 is a 940nm side looking Infrared Emitting Diode in GaAlAs multi quantum well (MQW) technology. It is moulded in clear, untinted plastic package (with lens) for surface mounting (SMD). It is suitable for use in IR touch panel, high power emitter for low space applications and high performance transmissive or reflective sensors.
● High speed
● High reliability
● High radiant power
● High radiant intensity
● ϕ = ±75° Angle of half sensitivity
● Low forward voltage
● Package matches with detector VEMD10940F
VISHAY
6 Pages / 0.28 MByte
VISHAY
6 Pages / 0.28 MByte
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