GENERAL DESCRIPTION
●The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K ×8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPPis not required. The unique cell architecture of the W29EE011 results in fast program/erase operations with extremely low current consumption (compared toother comparable 5-volt flash memory products).
●FEATURES
●Single 5-volt program and erase operations
●Fast page-write operations
● −128 bytes per page
● −Page program cycle: 10 mS (max.)
● −Effective byte-program cycle time: 39 µS
● −Optional software-protected data write
●Fast chip-erase operation: 50 mS
●Read access time: 90/150 nS
●Page program/erase cycles: 1K/10K
●Ten-year data retention
●Software and hardware data protection
●Low power consumption
● −Active current: 25 mA (typ.)
● −Standby current: 20 µA (typ.)
●Automatic program timing with internal VPPgeneration
●End of program detection
● −Toggle bit
● −Data polling
●Latched address and data
●TTL compatible I/O
●JEDEC standard byte-wide pinouts
●Available packages: 32-pin 600 mil DIP, 32-pin TSOP (8 x 20 mm), 32-pin STSOP
●(8 x 14 mm), 32-pin PLCC, and Lead-free 32-pin PLCC
