| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -120 V |
| Current Rating | -1.00 A |
| Case/Package | E-Line-3 |
| Number of Positions | 3 Position |
| Polarity | P-Channel |
| Power Dissipation | 1 W |
| Breakdown Voltage (Collector to Emitter) | 120 V |
| Continuous Collector Current | 1A |
| hFE Min | 3000 @1A, 5V |
| Input Power (Max) | 1 W |
| DC Current Gain (hFE) | 3000 |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Gain Bandwidth | 160 MHz |
| Power Dissipation (Max) | 1000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Operating Temperature | -55℃ ~ 200℃ (TJ) |
Are traditional transistors not providing enough of a current gain? The PNP ZTX705 Darlington transistor from Diodes Zetex can help. This product"s maximum continuous DC collector current is 1 A, while its minimum DC current gain is 3000@10mA@5 V|3000@100mA@5V|3000@1A@5V|2000@2A@5V. It has a maximum collector emitter saturation voltage of 1.3@1mA@1A|2.5@2mA@2A V. This Darlington transistor array"s maximum emitter base voltage is 10 V, while its maximum base emitter saturation voltage is 1.8@10mA@1A V. Its maximum power dissipation is 1000 mW. This Darlington transistor array has an operating temperature range of -55 °C to 200 °C. It has a maximum collector emitter voltage of 120 V and a maximum emitter base voltage of 10 V.
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