| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 130 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 4.00 A |
| Case/Package | E-Line-3 |
| Power Rating | 1.2 W |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 1.2 W |
| Gain Bandwidth Product | 130 MHz |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| Continuous Collector Current | 4A |
| hFE Min | 100 @2A, 2V |
| Input Power (Max) | 1.2 W |
| DC Current Gain (hFE) | 200 |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 1200 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Material | Silicon |
| Size-Length | 4.77 mm |
| Size-Width | 2.41 mm |
| Size-Height | 4.01 mm |
| Operating Temperature | -55℃ ~ 200℃ (TJ) |
If you require a general purpose BJT that can handle high voltages, then the NPN ZTX853 BJT, developed by Diodes Zetex, is for you. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1200 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 6 V.
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