| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 450 mA |
| Case/Package | TO-92-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 2 Ω |
| Polarity | N-Channel |
| Power Dissipation | 700 mW |
| Threshold Voltage | 2.4 V |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Drain to Source) | 60.0 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 450 mA |
| Input Capacitance (Ciss) | 75pF @18V(Vds) |
| Input Power (Max) | 700 mW |
| Operating Temperature (Max) | 150 ℃ |
| Power Dissipation (Max) | 700mW (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Operating Temperature | -55℃ ~ 150℃ |
The ZVN2106A is a N-channel enhancement mode MOSFET with 8A pulsed drain current.
● ±20V Gate Source Voltage
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