TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 60.0 V |
Current Rating | 600 mA |
Case/Package | TO-92-3 |
Power Rating | 0.7 W |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 1.5 Ω |
Polarity | N-Channel |
Power Dissipation | 700 mW |
Threshold Voltage | 3 V |
Input Capacitance | 100 pF |
Drain to Source Voltage (Vds) | 60 V |
Breakdown Voltage (Drain to Source) | 60 V |
Breakdown Voltage (Gate to Source) | ±20.0 V |
Continuous Drain Current (Ids) | 600 mA |
Rise Time | 12 ns |
Input Capacitance (Ciss) | 100pF @25V(Vds) |
Input Power (Max) | 700 mW |
Fall Time | 15 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | 55 ℃ |
Power Dissipation (Max) | 700mW (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Bulk |
Size-Length | 4.77 mm |
Size-Width | 2.41 mm |
Size-Height | 4.01 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
In addition to amplifying electronic signals, you"ll be able to switch between various lines with the ZVN4206AV power MOSFET, developed by Diodes Zetex. Its maximum power dissipation is 700 mW. This device is made with dmos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
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